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Preparation and Characterization of Hotpressing AZO Sputter Target

Time:2014-03-12 09:03:18  From:CNKI  Author:Wang Xingming,Bai Xue,Duan Hua

Abstract: AZO targets were prepared by hot-pressing using ZnO and Al2O3 mixture in composition of 98 ∶ 2% .The effects of hot pressing conditions on the relative density were studied.The results revealed that the target density increased with increase of the tem-perature and pressure.But with the increase of the preserving time,there existed a phenomena of “anti-densification”,which was contributed to growth of the channel pores and the increase of the volume content of the isolated pores.Among designed experiments,an AZO sputter target was hot pressed with pressure of 18 MPa,temperature of 1150 ℃ and preserving time of 90 min.The fracture morphology was observed by SEM photograph,and the density of target was measured using Archimedes method.The channel pore size and the volume content of the channel and isolated pores were measured by mercury intrusion porosimeter,and the phase structure of target was analyzed by X-ray diffractometer with a monochromated Cu Kα X-ray source. Specifications were as following: the phase structure was Wurtzite,the density was 5.39 g·cm-3,the volume content of channel pores was 0.05%,the volume content of isolated pores was 3.4% ,the resistivity was 5.3 × 10-4 Ω·cm,and target life was longer than 150 W·h.AZO thin film was deposited by radiofrequency sputtering.The analysis showed that the average transmittance of AZO film was up to 85.5% ,and the resistivity was 3.1 × 10-4 Ω·cm,both met the needs of the transparent conductive oxide film for solar cell application.

Key words: AZO; sputter target; hot-pressing; sputtering; thin film solar cell


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