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Pulsed laser deposition of niobium doped TiO2 as transparent conducting films

Time:2014-03-12 10:56:28  From:CNKI  Author:Zhou Xiahui

Abstract
Due to the high transparency in the visible region and good conduction, transparent conducting oxide (TCO) films have great applications in flat panel display, touch panel, PV cells, reflect hot mirror, gas sensitive apparatus and transparent PN junction, etc. In this work, niobium doped TiO2(TNO) thin films were fabricated on fused silica substrate using pulsed laser deposition (PLD). The structures, optical properties and electrical properties of the films were investigated. The results indicated that TNO films had high transmittance in visible region and low electrical resistivity, which satisfied the basic demand of TCO thin films. The main results are listed as follows,
(1) Niobium doped antase TiO2 thin films were synthesized on fused silica substrate by pulsed laser deposition. The structure, composition and surface image were characterized by X-ray Diffraction (XRD), X-ray Fluorescence (XRF), Atomic Force Microscope (AFM) and Field Scanning Electron Microscope (FSEM). It indicated that the (101) oriented anatase TNO thin films are obtained when laser energy density is about 3J/cm2, repetition frequency is 4Hz, substrate temperature is 600 ℃, oxygen pressure is 0.8Pa, and after the deposition, the thickness of the films was measured to be 190nm by cross-section SEM.
(2) The average transmittance of TNO thin films in visible region was studied using UV-visible spectroscopy. The results show that the transmittance of the films is above 70%,and with the increasing of oxygen pressure, the UV absorption edge moves toward the short wavelength side (blue shift).
(3) The electrical property of TNO thin films was investigated by the four-probe method and hall measurement method. It showed that the resistivity of the TNO films annealed in vacuum decreased sharply. After annealed at 400℃, the thin films exhibited good electrical property with resistivity ρ, carrier concentration n and Hall mobility μH was 1.1×10-3 cm, 5.59×1020cm-3 and 2.33cm2/Vs, respectively.

Key words: transparent conducting films TiO2 thin films resistivity pulsed laser deposition

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